2SA542参数引脚封装等应用资料
2SA542 Datasheet PDF
| 生产商 | 封装 | 功能应用 | 适应温度 | |
|---|---|---|---|---|
| Usha | Low frequency amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 250mW. |
2SA542 PDF | 最小°C | 最大°C |
- Toshiba 2SA500
(2SAxxx) Transistors - 2SA503
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 600MA I(C) | TO-39 - 2SA504
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-39 - Toshiba Semiconductor 2SA505
SILICON EPITAXIAL TYPE(PCT PROCESS) - Toshiba 2SA509
(2SAxxx) Transistors - 2SA509GTM
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 800MA I(C) | TO-92 - 2SA509TM
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 800MA I(C) | TO-92 - 2SA510
SILICON EPITAXIAL TYPE - Toshiba Semiconductor 2SA512
SILICON EPITAXIAL TYPE - 2SA52
- Micro Electronics 2SA532
Medium Power Amplifiers Switches - 2SA537
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 700MA I(C) | TO-5 - 2SA537B
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | TO-92 - 2SA537C
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | TO-92 - 2SA539
FREQUENCY AMPLIFIER