28LV256JI-4参数引脚封装等应用资料
28LV256JI-4 Datasheet PDF
生产商 | 封装 | 功能应用 | PDF | 适应温度 |
Turbo-IC | PLCC | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28LV256JI-4 PDF
| 最小°C | 最大°C |
- TRBIC 28LV256JC-3
Speed 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM - Turbo-IC 28LV256JC-4
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. - Turbo-IC 28LV256JC-5
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. - Turbo-IC 28LV256JC-6
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. - TRBIC 28LV256JI-3
Speed 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM - Turbo-IC 28LV256JI-4
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. - Turbo-IC 28LV256JI-5
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. - TRBIC 28LV256JI-6
Speed 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM - Turbo-IC 28LV256JM-3
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. - Turbo-IC 28LV256JM-4
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. - TRBIC 28LV256JM-5
Speed 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM - TRBIC 28LV256JM-6
Speed 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM - Turbo-IC 28LV256PC-3
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. - TRBIC 28LV256PC-4
Speed 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM - Turbo-IC 28LV256PC-5
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.