半导体资料网

28LV256JI-4参数引脚封装等应用资料

28LV256JI-4 Datasheet PDF

生产商封装功能应用PDF适应温度
Turbo-ICPLCCLow voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. 28LV256JI-4 PDF
最小°C | 最大°C

  • TRBIC 28LV256JC-3
    Speed 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
  • Turbo-IC 28LV256JC-4
    Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
  • Turbo-IC 28LV256JC-5
    Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
  • Turbo-IC 28LV256JC-6
    Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
  • TRBIC 28LV256JI-3
    Speed 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
  • Turbo-IC 28LV256JI-4
    Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
  • Turbo-IC 28LV256JI-5
    Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
  • TRBIC 28LV256JI-6
    Speed 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
  • Turbo-IC 28LV256JM-3
    Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
  • Turbo-IC 28LV256JM-4
    Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
  • TRBIC 28LV256JM-5
    Speed 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
  • TRBIC 28LV256JM-6
    Speed 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
  • Turbo-IC 28LV256PC-3
    Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
  • TRBIC 28LV256PC-4
    Speed 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
  • Turbo-IC 28LV256PC-5
    Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.

© 2024 - 半导体资料网 网站地图
Español 中文 Português Русский 日本語 Deutsch العربية Français 한국어 Italiano Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam