K4E160411D-B参数引脚封装等应用资料
K4E160411D-B Datasheet PDF
| 生产商 | 封装 | 功能应用 | 适应温度 | |
|---|---|---|---|---|
| Samsung | SOJ | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
K4E160411D-B PDF | 最小°C | 最大°C |
- Samsung semiconductor K4E160411D
4Bit CMOS Dynamic with Extended Data - Samsung K4E160411D-B
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - Samsung K4E160411D-F
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - Samsung semiconductor K4E160412D
4Bit CMOS Dynamic with Extended Data - Samsung K4E160412D-B
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. - Samsung K4E160412D-F
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.