TC59S6416BFT-80参数引脚封装等应用资料
TC59S6416BFT-80 Datasheet PDF
| 生产商 | 封装 | 功能应用 | 适应温度 | |
|---|---|---|---|---|
| Toshiba Semiconductor | DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TC59S6416BFT-80 PDF | 最小°C | 最大°C |
- Toshiba Semiconductor TC59S6416BFT
DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC - Toshiba Semiconductor TC59S6416BFT-80
DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC - Toshiba Semiconductor TC59S6416BFT/BFTL-80
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM - Toshiba Semiconductor TC59S6416BFT/BFTL10
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM - Toshiba Semiconductor TC59S6416BFTBFTL-80
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT SYNCHRONOUS DYNAMIC - Toshiba Semiconductor TC59S6416BFTBFTL10
1,048,576/2,097,152/4,194,304-WORDSX4BANKSX16/8/4-BIT SYNCHRONOUS DYNAMIC - Toshiba Semiconductor TC59S6416BFTL
DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC - Toshiba Semiconductor TC59S6416BFTL-10
1M Word x 4 Banks x 16 Bits Synchronous Dynamic RAM(1M ??x 4??x 16 ?????????RAM)